DAM2N650F datasheet(2/4 Pages) DACO

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

IDS=250uA

650

Zero Gate Voltage Drain Current

IDSS

VGS=0V

VDS=650V

Gate-Body Leakage

IGSS

VGS=±30V

VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS

IDS=250uA

2.5

3.5

4.5

Static Drain-Source On-Resistance

RDS(on)

VGS=10V

IDS=1A

3.8

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V

VGS=0V

Freq.=1MHz

304

550

Output Capacitance

Coss

30.8

Reverse Transfer Capacitance

Crss

4.16

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=325V

VGS=10V

RG =

10Ω

IDS=2A

10.6

Rise Time

Turn-Off Delay Time

Td(off)

31.1

Fall Time

Total Gate Charge

VDS=520V

VGS=10V

IDS=2A

11.2

Gate to Source Charge

Qgs

1.75

3.5

Gate to Drain Charge

Qgd

6.1

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V

IS=1A

Notes:

1.Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. VDD=50V,VGS=10V,L=114mH,IAS=2A.,RG=

25Ω, Starting TJ=25°C

Aug.2017

DAM2N650F

3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

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