EMB30P03VAT datasheet(4/5 Pages) EXCELLIANCE

Part #	EMB30P03VAT

Description	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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4 / 5 page

2015/5/12

p.4

EMB30P03VAT

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature (°C)

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐8A

V = ‐4.5V

1.4

1.6

1.8

150

100

125

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.001

0.01

0.1

0.2

0.4

25°C

V = 0V

100

0.8

1.0

‐55°C

1.2

‐V ‐ Drain‐Source Voltage( V )

0.5

‐6.0V

‐5.0V

11.5

‐8.0V

‐7.0V

V = ‐10 V

Typical output characteristics

‐4.5V

2.5

T = 25 C

‐V ‐ Gate‐Source Voltage( V )

On‐Resistance Variation with Gate‐Source Voltage

0.03

0.06

0.09

0.12

I = ‐6A

T = 125 C

Capacitance Characteristics

‐V ‐ Drain‐Source Voltage( V )

300

150

450

1050

750

600

900

1200

Crss

Coss

Ciss

V = 0V

f = 1MHZ

Q ,Gate Charge( nC )

Gate Charge Characteristics

I = ‐8A

‐15V

‐10V

V = ‐5V

TYPICAL CHARACTERISTICS

EMB30P03VAT Datasheet(PDF) 4 Page - Excelliance MOS Corp.

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