EMBA5N10CS datasheet(1/5 Pages) EXCELLIANCE

Part #	EMBA5N10CS

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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1 / 5 page

2013/10/8

p.1

EMBA5N10CS

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

100V

RDSON (MAX.)

150mΩ

ID

10A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

10

A

TC = 100 °C

7

Pulsed Drain Current

1

IDM

40

Avalanche Current

IAS

12

Avalanche Energy

L = 0.1mH, ID=12A, RG=25Ω

EAS

7.2

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

3.6

Power Dissipation

TC = 25 °C

PD

30

W

TC = 100 °C

13

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

4.2

°C / W

Junction‐to‐Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

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EMBA5N10CS Datasheet(PDF) 1 Page - Excelliance MOS Corp.

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