EMBA5P06P datasheet(1/5 Pages) EXCELLIANCE

Part #	EMBA5P06P

Description	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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1 / 5 page

2016/11/24

p.1

EMBA5P06P

G

S

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS ‐60V

RDSON (MAX.)

150mΩ

ID ‐2.4A

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

‐2.4

A

TA = 70 °C ‐1.5

Pulsed Drain Current

1

IDM ‐9.6

Power Dissipation

TA = 25 °C

PD

1.47

W

TA = 70 °C

0.94

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

18

°C / W

Junction‐to‐Ambient

3

RJA

85

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

385°C / W when mounted on a 1 in2 pad of 2 oz copper.

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EMBA5P06P Datasheet(PDF) 1 Page - Excelliance MOS Corp.

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