DAM7N650B datasheet(2/4 Pages) DACO

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

IDS=250uA

650

Zero Gate Voltage Drain Current

IDSS

VGS=0V

VDS=650V

Gate-Body Leakage

IGSS

VGS=±30V

VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS

IDS=250uA

Static Drain-Source On-Resistance

RDS(on)

VGS=10V

IDS=3A

1.2

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V

VGS=0V

Freq.=1MHz

1100

1650

Output Capacitance

Coss

105

150

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=300V

VGS=10V

RG =

25Ω

IDS=4A

Rise Time

Turn-Off Delay Time

Td(off)

144

Fall Time

Total Gate Charge

VDS=520V

VGS=10V

IDS=4A

Gate to Source Charge

Qgs

6.4

Gate to Drain Charge

Qgd

11.8

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V

IS=1A

Notes:

1.Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. VDD=50V,VGS=10V,L=10mH,IAS=11A.,RG=

25Ω, Starting TJ=25°C

3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

Aug.2017

DAM7N650B

DAM7N650B Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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