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DAM33N65S Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM33N65S Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 65V RDS(ON) Typ.3.7mΩ @ VGS = 10V Improved dv/dt capability Fast switching Pb Free & RoHS Compliant Green Device Available Applications Networking Load Switch LED applications Quick Charger Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 65 V Gate Source Voltage VGS +20/-12 V Drain Current Continuous @ Tc = 25°C ID 33 A @ Tc = 100°C 20.8 Drain Current Pulsed@ TC = 25°C IDM 132 A Single Pulse Avalanche Energy EAS 174 mJ Maximum Power Dissipation PD 9.4 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJC 13.3 °C/W Aug.2018 DAM33N65S Note3 |
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