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DAM90N30G Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM90N30G Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 30V RDS(ON) Typ.3mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ TC = 25°C ID 90 A @ TC = 100°C 57 Drain Current Pulsed@ TC = 25°C IDM 360 A Single Pulse Avalanche Energy EAS 125 mJ Single Pulse Avalanche Current IAS 50 A Maximum Power Dissipation PD 115 W Storage Temperature Range TSTG -55 to +175 °C Operating Junction Temperature Range TJ -55 to +175 °C Thermal Resistance Junction to Case R θJC 1.3 °C/W Mar.2018 DAM90N30G Note3 |
Similar Part No. - DAM90N30G |
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Similar Description - DAM90N30G |
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