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SLP60R080SS Datasheet(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLP60R080SS Datasheet(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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1 / 6 page  Features - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R080SS Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25℃) 47 A - Continuous (TC = 100℃) 30 A IDM Drain Current - Pulsed (Note 1) 140 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 720 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25℃) 205 W - Derate above 25℃ 1.67 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance, Junction-to-Case 0.6 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W Maple Semiconductor CO.,LTD http://www.maplesemi.com Rev 1.0 September 2017 Page1 General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability S D G G D S TO-220 SLP60R080SS 600V N-Channel MOSFET |
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