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CLA30MT1200NPZ Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # CLA30MT1200NPZ
Description  isc Thyristors
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

CLA30MT1200NPZ Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  CLA30MT1200NPZ Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
CLA30MT1200NPZ
DESCRIPTION
·
With TO-263( D2PAK ) packaging
·
Operating in 3 quadrants
·
High commutation capability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Switching applications
·
Phase control
·
Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM
Repetitive peak off-state voltage
1200
V
VRRM
Repetitive peak reverse voltage
1200
V
IT(RSM)
Average on-state current
15
A
ITSM
Surge non-repetitive on-state current
50HZ
60HZ
170
185
A
PG(AV)
Average gate power dissipation ( over any 20 ms period )
0.2
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~125
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃
Tj=125℃
0.01
1.5
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
IT=15A
1.38
V
IGT
Gate-trigger current
VD =6V
Ⅰ
40
mA
Ⅱ
40
Ⅲ
40
VGT
Gate-trigger voltage
VD =6V
1.3
V
Rth (j-mb)
Junction to mounting base
Half cycle
0.95
℃
/W


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