DAM65N100G datasheet(2/4 Pages) DACO

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

IDS=250uA

100

Zero Gate Voltage Drain Current

IDSS

VGS=0V

VDS=100V

Gate-Body Leakage

IGSS

VGS=20V

VDS=0V

100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS

IDS=250uA

1.2

1.7

2.5

Static Drain-Source On-Resistance

RDS(on)

VGS=10V

IDS=18A

7.2

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V

VGS=0V

Freq.=1MHz

3200

6400

Output Capacitance

Coss

873

1740

Reverse Transfer Capacitance

Crss

174

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=50V

VGS=10V

RG =

6Ω

IDS=1A

14.6

Rise Time

32.8

Turn-Off Delay Time

Td(off)

62.2

125

Fall Time

28.4

Total Gate Charge

VDS=80V

VGS=10V

IDS=10A

53.5

Gate to Source Charge

Qgs

7.5

Gate to Drain Charge

Qgd

13.3

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V

IS=1A

Notes:

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. VDD=50V,VGS=10V,L=0.1mH,IAS=68A. RG=

25Ω, Starting TJ=25°C

3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

Mar.2018

DAM65N100G

DAM65N100G Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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