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DAM10P60D Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM10P60D Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  P-Channel Enhancement Mode MOSFET Features VDSS = -60V RDS(ON) Typ.87mΩ @ VGS = -10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -60 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID -10 A @ Tc = 100°C -6.3 Drain Current Pulsed@ TC = 25°C IDM -40 A Single Pulse Avalanche Energy EAS 25 mJ Single Pulse Avalanche Current IAS -18 A Maximum Power Dissipation PD 32 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 3.84 °C/W Aug.2017 DAM10P60D |
Similar Part No. - DAM10P60D |
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