DAM30P100D datasheet(2/4 Pages) DACO

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

IDS=-250uA

-100

Zero Gate Voltage Drain Current

IDSS

VGS=0V

VDS=-100V

-1

Gate-Body Leakage

IGSS

VGS=±20V

VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS

IDS=-250uA

-1.2

-2.5

Static Drain-Source On-Resistance

RDS(on)

VGS=-10V

IDS=-15A

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

VDS=-25V

VGS=0V

Freq.=1MHz

6315

9000

Output Capacitance

Coss

220

330

Reverse Transfer Capacitance

Crss

100

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=-50V

VGS=-10V

RG =

25Ω

IDS=-5A

105

Rise Time

Turn-Off Delay Time

Td(off)

215

450

Fall Time

180

Total Gate Charge

VDS=-50V

VGS=-10V

IDS=-10A

150

Gate to Source Charge

Qgs

16.2

Gate to Drain Charge

Qgd

13.8

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V

IS=-1A

-1

Notes:

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. VDD=-50V,VGS=-10V,L=0.1mH,IAS=-60A., Starting TJ=25°C

3. R

R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

Aug.2017

DAM30P100D

DAM30P100D Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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