EMDA2N20F datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2013/12/20

p.2

EMDA2N20F

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

200

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.0

3.2

4.5

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 160V, VGS = 0V

A

VDS = 130V, VGS = 0V, TJ = 125 °C

On‐State Drain Current

ID(ON)

VDS = 5V, VGS = 10V

Drain‐Source On‐State Resistance

RDS(ON)

VGS = 10V, ID = 10.5A

105

120

mΩ

VGS = 7V, ID = 10.5A

115

140

Forward Transconductance

gfs

VDS = 5V, ID = 10.5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

2860

Output Capacitance

Coss

143

Reverse Transfer Capacitance

Crss

Total Gate Charge

1,2

VDS = 100V, VGS = 10V,

ID = 10.5A

36.4

Gate‐Source Charge

1,2

Qgs

10.4

Gate‐Drain Charge

1,2

Qgd

13.4

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = 100V,

180

Turn‐Off Delay Time

1,2

td(off)

ID = 1A, VGS = 10V, RGS = 6Ω

250

Fall Time

1,2

200

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current

ISM

Forward Voltage

VSD

IF = IS, VGS = 0V

1.5

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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