DAM4D5P30L datasheet(2/4 Pages) DACO

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Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V IDS=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VGS=0V VDS=-30V

-1

Gate-Body Leakage

IGSS

VGS=±20V VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS IDS=-250uA

-1.2

-1.6

-2.2

Static Drain-Source On-Resistance

RDS(on)

VGS=-10V IDS=-4A

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

VDS=-15V

VGS=0V

Freq.=1MHz

560

810

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=-15V

VGS=-10V

RG =6Ω

IDS=-1A

3.4

Rise Time

10.8

Turn-Off Delay Time

Td(off)

26.9

Fall Time

6.9

Total Gate Charge

VDS=-15V

VGS=-4.5V

IDS=-3A

5.1

Gate to Source Charge

Qgs

Gate to Drain Charge

Qgd

2.2

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V IS=-1A

-1

Notes:

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. R

R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

Jun.2018

DAM4D5P30L

DAM4D5P30L Datasheet(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

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