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MMBT2222 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MMBT2222 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors www.kexin.com.cn 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 NPN General Purpose Amplifier MMBT2222 ■ Features ● Epitaxial planar die construction. ● Complementary PNP type available(MMBT2907) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Power dissipation PD 250 mW Thermal resistance from junction to ambient RθJA 500 ℃/W Operating and Storage and Temperature Range Tj, TSTG -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 75 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 μA, IC = 0 6 V Collector cutoff current ICBO VCB=50V, IE=0 10 nA Emitter cutoff current IEBO VEB= 3V, IC=0 100 nA VCE=10V, IC= 0.1mA 35 VCE=10V, IC= 150mA 100 300 VCE=10V, IC= 500mA 30 IC = 150 mA; IB = 15 mA 0.4 V IC = 500 mA; IB = 50 mA 1.6 V IC = 150 mA; IB = 15 mA 1.3 V IC = 500 mA; IB = 50 mA 2.6 V Transition frequency fT IC = 20 mA; VCE = 20 V; f = 100 MHz 250 MHz Delay time td 10 ns Rise time tr 25 ns Storage time ts 225 ns Fall time tf 60 ns * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. hFE DC current gain VCC=30V, IC=150mA,IB1=-IB2=15mA VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA collector-emitter saturation voltage * VCE(sat) VBE(sat) base-emitter saturation voltage * ■ Marking Marking M1B |
Similar Part No. - MMBT2222 |
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Similar Description - MMBT2222 |
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