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WNM2016 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # WNM2016
Description  N-Channel MOSFET
PDF  4 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

WNM2016 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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Transistors
www.kexin.com.cn
1
MOSFET
SMD Type
N-Channel MOSFET
WNM2016
D
S
G
0.4 +0.1
-0.1
2.9 +0.1
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.1
1
2
3
Unit : mm
SOT-23
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
Features
VDS (V) =20 V
ID = 3.2 A
RDS(ON) < 47m Ω @ VGS = 4.5 V
RDS(ON) < 55m Ω @ VGS = 2.5 V
RDS(ON) < 66m Ω @ VGS = 1.8 V
Absolute Maximum Ratings TA = 25℃ unless otherwise noted
Symbol
10 S
Steady State
Unit
VDS
VGS
TA=25℃
3.2
2.9
TA=70℃
2.5
2.3
TA=25℃
0.8
0.7
TA=70℃
0.5
0.4
TA=25℃
2.9
2.7
TA=70℃
2.3
2.1
TA=25℃
0.6
0.5
TA=70℃
0.4
0.3
IDM
A
Thermal Resistance.Junction- to-Ambient a
RthJA
150
175
Thermal Resistance.Junction- to-Ambient b
RthJA
180
210
Junction-to-Case Thermal Resistance
RthJC
76
TJ
Tstg
Notes:
a Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
b Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
10
150
-55 to 150
/W
Continuous Drain Current (TJ = 150 °C) b
ID
A
Maximum Power Dissipation b
PD
W
Maximum Power Dissipation a
PD
A
W
Junction Temperature
Storage Temperature Range
V
Pulsed Drain Current c
Parameter
Drain-Source Voltage
Gate-Source Voltage
20
±8
Continuous Drain Current (TJ = 150 °C) a
ID


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