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WNM2016 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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WNM2016 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page ![]() Transistors www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET WNM2016 D S G 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1 2 3 Unit : mm SOT-23 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Features ● VDS (V) =20 V ● ID = 3.2 A ● RDS(ON) < 47m Ω @ VGS = 4.5 V ● RDS(ON) < 55m Ω @ VGS = 2.5 V ● RDS(ON) < 66m Ω @ VGS = 1.8 V ■ Absolute Maximum Ratings TA = 25℃ unless otherwise noted Symbol 10 S Steady State Unit VDS VGS TA=25℃ 3.2 2.9 TA=70℃ 2.5 2.3 TA=25℃ 0.8 0.7 TA=70℃ 0.5 0.4 TA=25℃ 2.9 2.7 TA=70℃ 2.3 2.1 TA=25℃ 0.6 0.5 TA=70℃ 0.4 0.3 IDM A Thermal Resistance.Junction- to-Ambient a RthJA 150 175 Thermal Resistance.Junction- to-Ambient b RthJA 180 210 Junction-to-Case Thermal Resistance RthJC 76 TJ Tstg Notes: a Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 10 150 -55 to 150 ℃ /W Continuous Drain Current (TJ = 150 °C) b ID A Maximum Power Dissipation b PD W Maximum Power Dissipation a PD A W Junction Temperature Storage Temperature Range ℃ V Pulsed Drain Current c Parameter Drain-Source Voltage Gate-Source Voltage 20 ±8 Continuous Drain Current (TJ = 150 °C) a ID |
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