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EMF09P02V Datasheet(PDF) 4 Page - Excelliance MOS Corp.

Part # EMF09P02V
Description  P?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMF09P02V Datasheet(HTML) 4 Page - Excelliance MOS Corp.

  EMF09P02V Datasheet HTML 1Page - Excelliance MOS Corp. EMF09P02V Datasheet HTML 2Page - Excelliance MOS Corp. EMF09P02V Datasheet HTML 3Page - Excelliance MOS Corp. EMF09P02V Datasheet HTML 4Page - Excelliance MOS Corp. EMF09P02V Datasheet HTML 5Page - Excelliance MOS Corp.  
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2012/06/19 
p.4 
EMF09P02V
‐V   ‐ Drain‐Source Voltage( V )
0
0
20
1
DS
80
40
60
‐3.0V
‐2.5V
23
4
‐4.0V‐3.5V
V   = ‐4.5 V
GS
Typical output characteristics
‐1.8V
5
T   = 25°C
‐ V   ‐ Gate‐Source Voltage( V )
5
0.010
0
0
0.005
0.015
12
GS
34
A
0.030
0.020
0.025
0.035
A
T   = 125°C
7
68
9
10
I   = ‐ 8A
D
On‐Resistance Variation with Gate‐Source Voltage
DS
V     = ‐ 5V
Q   ‐ Gate Charge( nC )
0
0
1
2
g
15
30
I   = ‐ 14A
3
4
5
D
60
45
75
‐ 10V
Gate Charge Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
T   = 125°C
‐V   ‐ Body Diode Forward Voltage( V )
0.6
0.001
0
0.01
0.1
SD
0.2
0.4
25°C
V    = 0V
1
10
100
GS
A
0.8
1.0
‐55°C
1.2
‐ V   , Drain‐Source Voltage( V )
Capacitance Characteristics
6000
0
0
2000
4000
Crss
DS
5
Coss
8000
10000
12000
10
15
20
Ciss
f =1MHz
VGS=0 V
I      = ‐ 14 A
T   ‐ Junction Temperature (°C)
‐50
0.6
0.8
1.0
J
‐25
0
25
50
D
V     = ‐ 4.5V
1.2
1.4
1.6
GS
150
100
75
125
On‐Resistance Variation with Temperature
 
TYPICAL CHARACTERISTICS 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 



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