EMF50N02JS datasheet(2/6 Pages) EXCELLIANCE

2 / 6 page

2016/2/17

p.2

EMF50N02JS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.4

0.75

1.2

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

A

VDS = 16V, VGS = 0V, TJ = 125 °C

On‐State Drain Current

ID(ON)

VDS = 5V, VGS = 10V

3.6

Drain‐Source On‐State Resistance

RDS(ON)

VGS = 4.5V, ID = 3.5A

mΩ

VGS = 2.5V, ID = 2A

VGS = 1.8V, ID = 1A

Forward Transconductance

gfs

VDS = 5V, ID = 3.5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

355

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1,2

VDS = 10V, VGS = 4.5V,

ID = 3.5A

4.6

Gate‐Source Charge

1,2

Qgs

0.66

Gate‐Drain Charge

1,2

Qgd

1.5

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = 10V,

Turn‐Off Delay Time

1,2

td(off)

ID = 1A, VGS = 4.5V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current

ISM

Forward Voltage

VSD

IF = IS, VGS = 0V

1.2

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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