EMF50N03JS datasheet(3/5 Pages) EXCELLIANCE

Part #	EMF50N03JS

Description	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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3 / 5 page

2015/10/19

p.3

EMF50N03JS

On‐Resistance Variation with Gate‐Source Voltage

T = 125°C

V ‐ Gate‐Source Voltage( V )

0.02

0.03

0.05

0.04

T = 25°C

0.09

0.07

0.06

0.08

0.10

I = 2 A

TYPICAL CHARACTERISTICS

0.8

1.2

1.0

1.5

1.4

0.7

-50

-25

100

125

150

TJ, Junction Temperature(°C)

ID= 3.5A

VGS= 4.5V

On‐Resistance Variation with Temperature

0.9

1.1

1.3

0.01

0.001

0.0001

00.2

0.4

0.6

0.8

1.2

VSD, Body Diode Forward Voltage( V )

Body Diode Forward Voltage Variation

with Source Current and Temperature

VGS

= 0V

TJ= 125°C

25°C

-55°C

0.1

100

VGS, Gate‐Source Voltage( V )

VDS= 5V

TA= -55°C

125°C

25°C

Transfer Characteristics

0.5

1.5

VGS = 4.5V

4.0V

3.5V

3.0V

2.5V

VDS, Drain‐Source Voltage( V )

On‐Region Characteristics

2.5

2.0

1.8

1.6

1.4

1.2

1.0

0.8

VGS = 2.5V

3.0V

3.5V

4.0V

4.5V

ID, Drain Current( A )

On‐Resistance Variation with Drain Current and Gate Voltage

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