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GTRA262802FC-V2-R0 Datasheet(PDF) 2 Page - Cree, Inc

Part # GTRA262802FC-V2-R0
Description  Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz
PDF  9 Pages
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

GTRA262802FC-V2-R0 Datasheet(HTML) 2 Page - Cree, Inc

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-07-24
2
GTRA262802FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage (main) VGS = –8 V, ID = 10 mA
V(BR)DSS
150
V
(peak) VGS = –8 V, ID = 10 mA
V(BR)DSS
150
V
Drain-source Leakage Current
VGS = –8 V, VDS = 10 V
IDSS
5
mA
Gate Threshold Voltage (main)
VDS = 10 V, ID = 10.8 mA
VGS(th)
–3.5
–3
–2.5
V
(peak)
VDS = 10 V, ID = 20 mA
VGS(th)
–3.5
–3
–2.5
V
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Voltage
VDD
0
55
V
Gate Quiescent Voltage
VDS = 48 V, ID = 100 mA
VGS(Q)
–3.0
V
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
125
V
Gate-source Voltage
VGS
–10 to +2
V
Gate Current (main)
IG
10.8
mA
(peak)
IG
20
mA
Drain Current (main)
ID
4.0
A
(peak)
ID
7.5
A
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceed-
ing only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the
operating voltage range (VDD) specified above.
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance (main, TCASE = 70 °C, 38 W CW)
RqJC
1.71
°C/W



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