GTRA374902FC-V1-R2 datasheet(1/8 Pages) CREE

Part #	GTRA374902FC-V1-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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GTRA374902FC

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 02.1, 2019-04-26

Thermally-Enhanced High Power RF GaN on SiC HEMT

450 W, 48 V, 3600 – 3700 MHz

GTRA374902FC

Package H-37248C-4

Description

The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobil-

ity transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermally-

enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 220 W Typ

- Peak: P3dB = 300 W Typ

• Typical Pulsed CW performance, 3700 MHz, 48 V,

Doherty @ P3dB, 10 µs, 10% duty cycle

- Output power = 450 W

- Drain efficiency = 60%

- Gain = 11.5 dB

• Capable of handling 10:1 VSWR @ 48 V, 63 W (WCDMA)

output power

• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

VDD = 48 V, IDQ = 250 mA, POUT = 63 W avg, VGSPEAK = –5.8 V, ƒ = 3700 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @

0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

10.8

12

—

dB

Drain Efficiency

hD

32

37.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–32.5

–28.5

dBc

Output PAR @ 0.01% CCDF

OPAR

7.5

8.2

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

35

37.5

40

42.5

45

47.5

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra374902fc_g1

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WOLFSPEED, INC.	GTRA374902FC-V1-R2	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27

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GTRA374902FC-V1-R2 Datasheet(PDF) 1 Page - Cree, Inc

GTRA374902FC-V1-R2 Datasheet(HTML) 1 Page - Cree, Inc

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