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IRF830 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # IRF830
Description  N-Channel PowerMESH MOSFET
PDF  7 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF830 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF830
N-Channel 500V-1.35
Ω - 4.5A – TO-220
PowerMESHTM MOSFET
www.artschip.com
2
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
TI
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.25
62.5
0.5
300
℃
/W
℃
/W
℃
/W
℃
AVALANCHE CHARACTERISTICS
Symbol
Parameter
MAX
Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj=25℃, ID=IAR, VDD=50V)
290
mJ
ELECTRICAL CHARACTERISTICS
(Tcase =25℃ unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID=250µA
VGS=0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS)=0
VDS=Max Rating
VDS=Max Rating
Tc=125℃
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS=0)
VGS=±20V
±100
nA
ON(*)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS=VGS ID=250µA
2
3
4
V
RDS(on)
Static Drain-source on
Resistance
VGS=10V
ID=2.7A
1.35
1.5
Ω
ID(on)
On State Drain Current
VDS>ID(on) x RDS(on)max
VGS=10V
4.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs(*)
Forward
Transconductance
VDS>ID(on) x RDS(on)max ID=2.7A
2.5
s
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0
610
120
10
pF
pF
pF



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