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MCP1726 Datasheet(PDF) 18 Page - Microchip Technology |
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MCP1726 Datasheet(HTML) 18 Page - Microchip Technology |
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18 / 30 page ![]() MCP1726 DS21936B-page 18 © 2005 Microchip Technology Inc. 5.0 APPLICATION CIRCUITS/ISSUES 5.1 Typical Application The MCP1726 is used for applications that require high LDO output current and a power good output. FIGURE 5-1: Typical Application Circuit. 5.1.1 APPLICATION CONDITIONS 5.2 Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation within the MCP1726 is a function of input voltage, output voltage, output current and quiescent current. The following equation can be used to calculate the internal power dissipation for the LDO. EQUATION 5-1: In addition to the LDO pass element power dissipation, there is power dissipation within the MCP1726 as a result of quiescent or ground current. The power dissi- pation as a result of the ground current can be calculated using the following equation: EQUATION 5-2: The total power dissipated within the MCP1726 is the sum of the power dissipated in the LDO pass device and the P(IGND) term. Because of the CMOS construc- tion, the typical IGND for the MCP1726 is 140 µA. Operating at a maximum of 3.63V results in a power dissipation of 0.51 milli-Watts. For most applications, this is small compared to the LDO pass device power dissipation and can be neglected. The maximum continuous operating junction tempera- ture specified for the MCP1726 is +125°C. To estimate the internal junction temperature of the MCP1726, the total internal power dissipation is multiplied by the ther- mal resistance from junction to ambient (R θJA) of the device. The thermal resistance from junction to ambi- ent for the 3X3DFN package is estimated at 41° C/W. EQUATION 5-3: Package Type = 3X3DFN8 Input Voltage Range = 3.3V ± 10% VIN maximum = 3.63V VIN minimum = 2.97V VOUT typical = 2.5V IOUT = 1.0A maximum VIN SHDN GND PWRGD CDELAY VOUT VOUT 1 2 3 4 5 6 7 8 10 µF VOUT = 2.5V @ 1A 10 µF VIN = 3.3V On Off VIN R1 C1 C2 1000 pF C3 MCP1726-2.5 10k Ω PWRGD P LDO V IN MAX ) () VOUT MIN () – () I OUT MAX ) () × = PLDO = LDO Pass device internal power dissipation VIN(MAX)= Maximum input voltage VOUT(MIN) = LDO minimum output voltage P IGND () V IN MAX () I VIN × = PI(GND) = Power dissipation due to the quiescent current of the LDO VIN(MAX) = Maximum input voltage IVIN = Current flowing in the VIN pin with no LDO output current (LDO quiescent current) T JMAX () P TOTAL R θ JA × T AMAX + = TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation R θJA = Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature |
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