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GD25VQ80C Datasheet(PDF) 54 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VQ80C Datasheet(HTML) 54 Page - GigaDevice Semiconductor (Beijing) Inc. |
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54 / 55 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VQ80C 54 11. REVISION HISTORY Version No Description Page Date 1.0 Initial Release All 2015-7-31 1.1 Modify DATA PROTECTION P9 2015-8-3 1.2 Modify Command Read Security Registers (48H) P35 2015-10-20 1.3 Modify Package USON8 (3*2mm, thickness 0.45mm) Modify Package USON8 (4*3mm) Modify AC CHARACTERISTICS: tCHCL Min.0.2 V/ns Change to 0.1 V/ns tCLCH Min.0.2 V/ns Change to 0.1 V/ns Modify POWER-ON TIMING: tPUW Min 1ms Change to 5ms Modify Figure 40. Power-on Timing Sequence Diagram P52 P53 P43 P44 P41 P41 2015-11-13 1.4 Modify AC CHARACTERISTICS: add tRST_R & tRST_P & tRST_E Modify DC CHARACTERISTICS: Deep Power-Down Current Modify POWER-ON TIMING: TVSL Min 10us Change to 5ms Modify Package USON8 (2*3mm, thickness 0.45mm) Modify General Description P43 P41 P41 P52 P5 2016-04-27 1.5 Delete Chapter 8.3 of Rev. 1.4. Delete “Output Short Circuit Current 200mA” in Chapter 8.3 (Rev. 1.5). Modify VCC in Chapter 8.3 (Rev. 1.5) from “-0.6 to VCC+0.4” to “-0.6 to 4.2”. Modify VWI min. value in Table 6 from 1.9 to 1.5, and delete VWI typ. Value Modify Icc2 in DC CHARACTERISTICS from 0.1~1 to 1~5. P41 P41 P41 P41 P43 2017-05-22 1.6 Modify SFDP P40 2017-6-26 1.7 Modify Icc9 from 400-800uA to 0.6-1.2mA Modify tw max. value from 30ms to 40ms Modify tBE2 max. value from 0.6/0.8s to 0.6/1.2s P43 P44 P44 2017-8-9 1.8 Modify tVSL from 5ms to 1.8ms Modify VWI max value from 2.3V to 2.2V Modify tSE max value from 150/300ms to 300ms Modify tBE1 max value from 0.4/0.7s to 0.7s Modify tBE2 max value from 0.6/1.2s to 1.2s Update Ordering Information Update the description of all packages P41 P41 P45 P45 P45 P47-48 P49-53 2018-12-4 |
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