GD25WD80C datasheet(29/47 Pages) GIGADEVICE

29 / 47 page

Uniform Sector

Standard and Dual Serial Flash

GD25WD80C

(T= -40℃~125℃, VCC=1.65~3.6V)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit.

ILI

Input Leakage Current

±2

μA

ILO

Output Leakage Current

±2

μA

ICC1

Standby Current

CS#=VCC,

VIN=VCC or VSS

0.1

μA

ICC2

Deep Power-Down Current

CS#=VCC,

VIN=VCC or VSS

0.1

μA

ICC3

Operating Current (Read)

CLK=0.1VCC / 0.9VCC

at 100MHz,

Q=Open(*1 I/O)

CLK=0.1VCC / 0.9VCC

at 80MHz,

Q=Open(*1 I/O,*2 Output)

2.5

CLK=0.1VCC / 0.9VCC

at 40MHz,

Q=Open(*1 I/O,*2 Output)

1.6

CLK=0.1VCC / 0.9VCC

at 16MHz,

Q=Open(*1 I/O,*2 Output)

1.2

5.5

ICC4

Operating Current (PP)

CS#=VCC

ICC5

Operating Current (WRSR)

CS#=VCC

ICC6

Operating Current (SE)

CS#=VCC

ICC7

Operating Current (BE)

CS#=VCC

ICC8

Operating Current (CE)

CS#=VCC

VIL

Input Low Voltage

-0.5

0.2VCC

VIH

Input High Voltage

0.7VCC

VCC+0.4

VOL

Output Low Voltage

IOL

=100μA

0.4

VOH

Output High Voltage

IOH =-

100μA

VCC-0.2

Note:

1. Typical value tested at T = 25℃. Icc3 (>50MHz) tested at VCC = 3.3V. Icc3 (<50MHz) tested at VCC = 1.8V.

2. Value guaranteed by design and/or characterization, not 100% tested in production.

GD25WD80C Datasheet(PDF) 29 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25WD80C Datasheet(HTML) 29 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47

Datasheet Download

Link URL