SSM3J56ACT

4

5.4.

5.4.

5.4.

5.4. Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Test Condition

Min







Typ.

1.6

0.2

0.4

Max







Unit

nC

5.5.

5.5.

5.5.

5.5. Source-Drain Characteristics (Unless otherwise specified, T

Source-Drain Characteristics (Unless otherwise specified, T

Source-Drain Characteristics (Unless otherwise specified, T

= 25

= 25

= 25 





))))

Characteristics

Diode forward voltage

(Note 1)

Symbol

Test Condition

Min



Typ.

1.0

Max

1.3

Unit

V

Note 1: Pulse measurement.

6.

6.

6.

6. Marking

Marking

Marking

Marking

Fig.

Fig.

Fig.

Fig. 6.1

6.1

6.1

6.1 Marking

Marking

Marking

Marking

7.

7.

7.

7. Equivalent Circuit

Equivalent Circuit

Equivalent Circuit

Equivalent Circuit

Fig.

Fig.

Fig.

Fig. 7.1

7.1

7.1

7.1 Equivalent Circuit

Equivalent Circuit

Equivalent Circuit

Equivalent Circuit

2016-09-13

Rev.2.0

©2015 Toshiba Corporation