HM30N02D datasheet(2/6 Pages) HMSEMI

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Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.8

1.4

VGS=4.5V, ID=20 A

5.5

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=2.5V, ID=15A

mΩ

Forward Transconductance

gFS

VDS=10V,ID=20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2000

Output Capacitance

Coss

500

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

200

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

6.4

Turn-on Rise Time

17.2

Turn-Off Delay Time

td(off)

29.6

Turn-Off Fall Time

VDD=10V,ID=2A,RL=1Ω

VGS=4.5V,RG=3Ω

16.8

Total Gate Charge

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

Qgd

VDS=10V,ID=20A,

VGS=10V

6.4

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=10A

1.2

Diode Forward Current

(Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 20A

di/dt = 100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω，

HM30N02D

HM30N02D Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM30N02D Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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