HY27SF161G2M-VIP datasheet(16/48 Pages) HYNIX

16 / 48 page

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

4. OTHER FEATURES

4.1 Data Protection.

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal

voltage detector disables all functions whenever Vcc is below about 1.1V(1.8V device), 2V(3.3V device). WP# pin pro-

vides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time

of minimum 10us is required before internal circuit gets ready for any command sequences as shown in Figure 26. The

two-step command sequence for program/erase provides additional software protection.

4.2 Ready/Busy.

The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,

copy-back, cache program and random read completion. The RB# pin is normally high and goes to low when the

device is busy (after a reset, read, program, erase operation). It returns to high when the internal controller has fin-

ished the operation. The pin is an open-drain driver thereby allowing two or more RB# outputs to be Or-tied. Because

pull-up resistor value is related to tr(RB#) and current drain during busy (Ibusy), an appropriate value can be obtained

with the following reference chart (Fig.27). Its value can be determined by the following guidance.

4.3 Power-On Auto-Read

The device is designed to offer automatic reading of the first page without command and address input sequence dur-

ing power-on.

An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activa-

tion of auto- page read function. Auto-page read function is enabled only when PRE pin is logic high state. Serial

access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device

(HY27UF(08/16)1G2M).

HY27SF161G2M-VIP Datasheet(PDF) 16 Page - Hynix Semiconductor