IXFN56N90P datasheet(1/5 Pages) IXYS

Part #	IXFN56N90P

Description	Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS100066B(01/14)

V

DSS

= 900V

I

D25

= 56A

R

DS(on)

 145m



t

rr

 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

900

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

900

V

GSS

Continuous

 30

V

GSM

Transient

 40

V

I

D25

T

C = 25C56

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

168

A

I

A

T

C = 25C28

A

E

AS

T

C = 25C2

J

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  150C

20

V/ns

P

D

T

C = 25C

1000

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

1.6mm (0.062 in.) from case for 10s

300

C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL  1mA

t = 1s

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in.

Terminal Connection Torque

1.3/11.5

Nm/lb.in.

Weight

30

g

IXFN56N90P

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS =  30V, VDS = 0V

 200 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

A

T

J = 125C

5 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

145 m



G

D

S

miniBLOC

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

PolarTM HiPerFETTM

Power MOSFET

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



Low R

DS(on) and QG



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

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