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IXFN100N50P Datasheet(PDF) 4 Page - IXYS Corporation |
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IXFN100N50P Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() IXFN100N50P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 20 40 60 80 100 120 140 160 4.04.5 5.05.5 6.06.5 7.0 7.5 VGS - Volts TJ = 125 oC 25 oC - 40 oC Fig. 8. Transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 QG - NanoCoulombs VDS = 250V I D = 50A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1000 10 100 1,000 VDS - Volts TJ = 150 oC TC = 25 oC Single Pulse 100μs RDS(on) Limit DC 10ms 1ms |
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