PARAMETER

SYMBOL

VALUE

UNIT

Power Dissipation

2

500

mW

Junction Temperature

200

°C

 

Storage Temperature Range

-65 to +200

°C

1.3

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZENER VOLTAGE

RANGE

TEST CURRENT

REVERSE LEAKAGE CURRENT

DYNAMIC

RESISTANCE

f = 1 kHz

V

Ω

DEVICE

mA

µA Max.

V

Min.

 

Nom.

 

Max.

 

Max.

Max.

BZX55C2V4

2.28

2.4

2.56

5

1

50.0

100

1.0

85

600

BZX55C2V7

2.5

2.7

2.9

5

1

10.0

50

1.0

85

600

BZX55C3V0

2.8

3.0

3.2

5

1

4.0

40

1.0

85

600

BZX55C3V3

3.1

3.3

3.5

5

1

2.0

40

1.0

85

600

BZX55C3V6

3.4

3.6

3.8

5

1

2.0

40

1.0

85

600

BZX55C3V9

3.7

3.9

4.1

5

1

2.0

40

1.0

85

600

BZX55C4V3

4.0

4.3

4.6

5

1

1.0

20

1.0

75

600

BZX55C4V7

4.4

4.7

5.0

5

1

0.5

10

1.0

60

600

BZX55C5V1

4.8

5.1

5.4

5

1

0.1

2.0

1.0

35

550

BZX55C5V6

5.2

5.6

6.0

5

1

0.1

2.0

1.0

25

450

BZX55C6V2

5.8

6.2

6.6

5

1

0.1

2.0

2.0

10

200

BZX55C6V8

6.4

6.8

7.2

5

1

0.1

2.0

3.0

8.0

150

BZX55C7V5

7.0

7.5

7.9

5

1

0.1

2.0

5.0

7.0

50

BZX55C8V2

7.7

8.2

8.7

5

1

0.1

2.0

6.2

7.0

50

BZX55C9V1

8.5

9.1

9.6

5

1

0.1

2.0

6.8

10

50

 

Rev 1.0

07/07/17

 

1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

reduce device reliability.

2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods.

Zener Voltages 10V to 75V are constructed using a larger die geometry.

Please see here for further details

 

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