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HM2010 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2010 Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 16 page ![]() 4 ELECTRICAL CHARACTERISTICS Note: The following electrical characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. But note that specifications are not guaranteed for parameters where no limit is given. The typical value however, is a good indication of device performance. All voltages in the following tables are specified at 25°C which is generally taken as parametric norm. TA=25°C, VDD = 3.6V, RL=8Ω, Gain = 2V/V, RI=150kΩ, CI=0.1µF, unless otherwise noted. SYMBO L PARAMETER CONDITIONS MIN TYP MAX UNIT VDD Supply Voltage 2.7 5.5 V VUVLU Power Up Threshold Voltage VDD from Low to High 2.2 V VUVLD Power Down Threshold Voltage VDD from High to Low 2.0 V IDD Quiescent Current VDD=5V, VIN=0V, No Load 2.2 5 mA VDD=3.6V, VIN=0V, No Load 2.0 4 mA ISD Shutdown Current SHDN =0V 0.1 µA VSDIH SHDN Input High 1.3 V VSDIL SHDN Input Low 0.4 V PO Output Power, Load=8Ω, VDD=5V THD+N=10%; f=1kHz 1.8 W THD+N=1%; f=1kHz 1.4 PO Output Power, Load=4Ω, VDD=5V THD+N=10%; f=1kHz 3.0 W THD+N=1%; f=1kHz 2.4 AV Gain 300kΩ / Ri V/V RO Output Resistance in Shutdown Mode SHDN =0V 2 kΩ RSHDN SHDN Input Resistance 300 kΩ VREF VREF Voltage VDD/2 V THD+N Total Harmonic Distortion + Noise, Load=8Ω VDD=3.6V, PO=0.5W, f=1kHz 0.05 % VDD=5V, PO=1W, f=1kHz 0.08 THD+N Total Harmonic Distortion + Noise, Load=4Ω VDD=3.6V, PO=1W, f=1kHz 0.06 VDD=5V, PO=2W, f=1kHz 0.09 VN Output Voltage Noise fNOISE=20Hz ~ 20kHz with Inputs AC-Grounded 45 µVRMS VOS Output Offset Voltage Inputs AC-Grounded 10 mV η Efficiency VDD=5V,PO=1W, RL=8Ω+33µH,f=1kHz 90 % PSRR Power Supply Rejection Ratio f=217Hz 75 dB CMRR Common Mode Rejection Ratio f=1kHz 70 dB TSTUP Startup Time 35 ms fPWM PWM Switching Frequency 800 kHz fJITTER PWM Frequency Jittering Range ±24 kHz ILIMIT Over-Current Protection Threshold VDD=3.6V 1.6 A TOTP Over-Temperature Threshold 160 C THYS Over-Temperature Hysteresis 30 C |
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