IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH50N30L2

Note 1: Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

13

22

31

S

C

iss

9300

pF

C

oss

V

900

pF

C

rss

260

pF

t

d(on)

36

ns

t

r

100

ns

t

d(off)

140

ns

t

f

50

ns

Q

g(on)

330

nC

Q

gs

V

52

nC

Q

gd

180

nC

R

thJC

0.23 °C/W

R

thCS

0.21

°C/W

Safe Operating Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

330

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

50

A

I

SM

Repetitive, pulse Width Limited by T

JM

200

A

V

SD

I

1.4

V

t

rr

430

ns

Q

RM

11

 C

I

RM

52

A

I

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

TO-247 Outline

Pins: 1 - Gate

2,4 - Drain

3 - Source

Resistive Switching Times

V

R