IXTK3N250L

IXTX3N250L

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

0.6

1.0

1.4

S

C

iss

5400

pF

C

oss

V

260

pF

C

rss

63

pF

t

d(on)

44

ns

t

r

32

ns

t

d(off)

120

ns

t

f

160

ns

Q

g(on)

230

nC

Q

gs

V

58

nC

Q

gd

100

nC

R

thJC

R

thCS

0.15

C/W

Safe Operating Area Specification

Symbol

Test Conditions

Characteristic Values

Min.

Typ.

Max.

SOA

V

250

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

3

A

I

SM

Repetitive, Pulse Width Limited by T

JM

12

A

V

SD

I

1.5

V

t

rr

370

ns

I

RM

18.4

A

Q

RM

3.4

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

 300s; duty cycle, d  2%.

Resistive Switching Times

V

R

I

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Drain

3 - Source

TO-264 Outline

2,4 = Drain

3 = Source

b

Q

D

R

E

A

S

R1

x2

b2

b1

L1

3

1

2

L

c

e

4

0P

e

Q1

1

2

3

4

b

C

L

D

R

Q

E

A

A1

L1

D2

D1

E1

A2

3 PLCS

2 PLCS

b4

A1

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