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FJPF5021 Datasheet(PDF) 2 Page - ON Semiconductor |
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FJPF5021 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Sustaining Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX (sus) Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped 500 V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 50 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 80 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 15 MHz tON Turn On Time VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω 0.5 µs tSTG Storage Time 3 µs tF Fall Time 0.1 0.3 µs Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 FJPF5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs(Typ.) •Wide SOA 1 1.Base 2.Collector 3.Emitter TO-220F |
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