© 1998 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FMMT549 Rev. 1.1.0

October 2014

FMMT549

PNP Low-Saturation Transistor

Features

• This device is designed with high-current gain and low-saturation

voltage with collector currents up to 2 A continuous.

• Sourced from process PB.

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number

Marking

Package

Packing Method

FMMT549

549

SSOT 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-35

V

Emitter-Base Voltage

-5

V

Collector Current

Continuous

-1

A

Peak Pulse Current

-2

Junction Temperature

150

°C

Storage Temperature Range

-55 to +150

°C

1. Base 2. Emitter 3. Collector

SuperSOT-23

Marking : 549

1

2

3