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STP25NM50N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP25NM50N
Description  N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP25NM50N Datasheet(HTML) 3 Page - STMicroelectronics

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STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
500
V
dv/dt(2)
Drain Source Voltage
Slope
Vdd=400V, Id=25A,
Vgs=10V
44
V/ns
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 11 A
0.110
0.140
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS=15 V, ID =11 A
19
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2565
511
77
pF
pF
pF
Coss eq. (*)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
315
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
VDD =250 V, ID = 11A
RG = 4.7Ω VGS = 10 V
(see Figure 19)
23
23
75
22
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID =22 A,
VGS = 10V,
(see Figure 23)
84
11
35
nC
nC
nC
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current (pulsed)
22
88
A
A
VSD (1)
Forward On Voltage
ISD = 22 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 21)
460
6.9
30
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 21)
532
8.25
31
ns
µC
A



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