BUL44D2 datasheet(6/12 Pages) ONSEMI

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BUL44D2

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 9. Capacitance

1000

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Resistive Switch Time, ton

1000

400

0.8

0.2

IC, COLLECTOR CURRENT (AMPS)

1.4

800

600

200

100

Cib (pF)

Cob (pF)

TJ = 25°C

f(test) = 1 MHz

TJ = 125°C

TJ = 25°C

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 40

µs

Figure 11. Resistive Switch Time, toff

4000

2500

1000

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Storage Time,

tsi @ IC/IB = 5

0.8

0.4

IC, COLLECTOR CURRENT (AMPS)

1.6

1.5

0.5

3000

3500

2000

1500

TJ = 125°C

TJ = 25°C

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 40

µs

2.5

1.2

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

Figure 13. Inductive Switching,

tc & tfi @ IC/IB = 5

700

400

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time

hFE, FORCED GAIN

500

600

300

200

100

0.5

1.5

TJ = 125°C

TJ = 25°C

IC = 1 A

IC = 0.3 A

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

IC/IBon = 5

tfi

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