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2

Rev. A, 2019-06-01

CAB450M12XM3

4600 Silicon Dr., Durham, NC 27703

Symbol Parameter

Min.

Typ.

Max. Unit

Test Conditions

Note

1200

V

Gate Threshold Voltage

1.8

2.5

3.6

2.0

Zero Gate Voltage Drain Current

5

200

Gate-Source Leakage Current

0.05

1.3

R

DS(on)

Drain-Source On-State Resistance (Devices

Only)

2.6

3.7

mΩ

Fig. 2

Fig. 3

4.6

Transconductance

355

S

Fig. 4

360

11.0

11.7

13.0

mJ

I

R

L= 13.6

Fig. 11

Fig. 13

10.1

11.3

12.1

Internal Gate Resistance

2.5

Ω

Input Capacitance

38.0

nF

Fig. 9

Output Capacitance

1.5

Reverse Transfer Capacitance

90

pF

Gate to Source Charge

355

nC

Per IEC60747-8-4 pg 21

Gate to Drain Charge

500

Total Gate Charge

1330

FET Thermal Resistance, Junction to Case

0.11

0.13 °C/W

Fig. 17

Symbol Parameter

Min.

Typ.

Max. Unit

Test Conditions

Note

Body Diode Forward Voltage

4.7

V

V

Fig. 7

4.2

V

t

rr

Reverse Recovery Time

52

ns

V

di/dt = 8 A/ns, T

Q

rr

Reverse Recovery Charge

6.6

I

rr

Peak Reverse Recovery Current

195

A

E

rr

0.2

1.1

1.9

mJ

L= 13.6

Fig. 14