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SSM3K35AMFV Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM3K35AMFV Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page ![]() SSM3K35AMFV 3 5. 5. 5. 5. Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance Reverse drain current (pulsed) (Note 1) (Note 2) (Note 2) (Note 2) Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) |Yfs| IDRP Test Condition VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 1 mA, VGS = 0 V VDS = 10 V, ID = 100 µA ID = 150 mA, VGS = 4.5 V ID = 150 mA, VGS = 2.5 V ID = 150 mA, VGS = 1.8 V ID = 20 mA, VGS = 1.5 V ID = 10 mA, VGS = 1.2 V ID = 150 mA, VGS = 4.5 V, Tj = 125 VDS = 10 V, ID = 150 mA Min 20 0.35 Typ. 0.75 1.1 1.4 1.7 2.4 1.25 0.5 Max ±1 1 1.0 1.1 1.6 2.4 3.1 9.0 2.5 600 Unit µA V V Ω S mA Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (100 µA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (turn-on delay time) Switching time (rise time) Switching time (turn-off delay time) Switching time (fall time) Symbol Ciss Crss Coss td(on) tr td(off) tf Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, ID = 75 mA, VGS = 0 to 4.5 V, RG = 10 Ω Min Typ. 18 5 6 2 2 6.5 5.5 Max 36 10 12 Unit pF ns 5.3. 5.3. 5.3. 5.3. Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Fig. Fig. Fig. Fig. 5.3.1 5.3.1 5.3.1 5.3.1 Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Fig. Fig. Fig. Fig. 5.3.2 5.3.2 5.3.2 5.3.2 Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform 2017-02-17 Rev.3.0 ©2016 Toshiba Corporation |
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