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IRF7326D2 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7326D2 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current -3.6 A ID @ TA = 70°C -2.9 IDM Pulsed Drain Current -29 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C q Co-packaged HEXFET® Power MOSFET and Schottky Diode q Ideal For Buck Regulator Applications q P-Channel HEXFET q Low VF Schottky Rectifier q Generation 5 Technology q SO-8 Footprint IRF7326D2 PD - 93763 FETKY™ ™ ™ ™ ™ MOSFET / Schottky Diode Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) I SD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2% Surface mounted on FR-4 board, t ≤ 10sec. Parameter Maximum Units RθJA Junction-to-Ambient 62.5 °C/W Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Thermal Resistance Ratings Description VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0.52V The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Top V ie w 8 1 2 3 4 5 6 7 A A S G D D K K SO -8 8/19/99 |
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