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2N3906S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N3906S
Description  isc Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3906S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2N3906S
DESCRIPTION
·
Low voltage( max .40V )
·
Low current ( max .200mA )
APPLICATIONS
·
Designed for high-speed switching
·
Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
thermal resistance from junction to ambient
250
K/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-200
mA
Ptot
Total Power Dissipation
300
mW
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃


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