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M59PW064 Datasheet(PDF) 11 Page - STMicroelectronics

Part # M59PW064
Description  64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M59PW064 Datasheet(HTML) 11 Page - STMicroelectronics

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M59PW064
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read Mode.
Table 4. Standard Commands
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The
Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A21, DQ8-DQ15 are Don’t Care.
Table 5. Multiple Word Program Command
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. SA is the Start Address. CA is the Continue Address. FA is the Final Address. X Don’t
Care, n = number of Words to be programmed.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = 25°C, VPP = 12V.
Command
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1X
F0
3555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Word Program
4
555
AA
2AA
55
555
A0
PA
PD
Block Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Phase
Bus Write Operations
1st
2nd
3rd
4th
5th
nth
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Set-Up
3
555
AA
2AA
55
555
20
Program
n+1
SA
PD1
CA
PD2
CA
PD3
CA
PD4
CA
PD5
CA
PAn
FA
X
Verify
n+1
SA
PD1
CA
PD2
CA
PD3
CA
PD4
CA
PD5
CA
PAn
FA
X
Parameter
Min
Typ (1)
Typical after
10k W/E Cycles (1)
Max
Unit
Chip Erase
41
44
120
s
Block Erase (128 KWords)
1.5
6
s
Program (Word)
9
200
µs
Chip Program (Multiple Word)
8
144
s
Chip Program (Word by Word)
36
144
s
Program/Erase Cycles (per Block)
10,000
cycles



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