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2N2222AS Datasheet(PDF) 4 Page - First Silicon Co., Ltd |
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2N2222AS Datasheet(HTML) 4 Page - First Silicon Co., Ltd |
4 / 6 page V CC= 30V I C/ I B= 10 I B1 = I B2 T J= 25°C t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 I C /I B = 10 T J= 25°C 5.0 7.0 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 10 7 0 5 0 3 0 2 0 100 70 50 30 20 10 7 0 5 0 t ’ s= t s–1/8 t f t f I C , COLLECTOR CURRENT (mA) Figure 6. Turn - Off Time I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time R S, SOURCE RESISTANCE (kΩ) Figure 8. Source Resistance Effects f = 1.0 kHz 0.010.02 0 05 0.1 0 2 0 5 1.0 2.0 5 0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) Figure 7. Frequency Effects I C=50 µA 100 µA 500 µA 1.0 mA I C = 1.0 mA, R S = 150 Ω I C = 500 µA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ I C = 50 µA, R S = 4.0 kΩ R S = OPTIMUM SOURCE RESISTANCE 10 8 6 4 2 0 I C , COLLECTOR CURRENT (mA) Figure 10. Current– Gain Bandwidth Product REVERSE VOLTAGE (VOLTS) Figure 9. Capacitance V CE = 20 V T J = 25°C C eb C cb 1.0 2.0 3 0 5.0 7 0 210 20 30 50 70 100 0.1 0.2 0 3 0.5 1.0 2 0 3 0 5.0 10 20 30 50 30 20 10 7.0 5.0 3.0 2.0 500 300 200 100 70 50 5 0 7.0 10 20 30 50 70 100 200 300 500 2011. 12. 06 4/6 Revision No : 2 2N2222AS |
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