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NX26F041A-3V-R Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers

Part # NX26F041A-3V-R
Description  1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE
PDF  14 Pages
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NX26F041A-3V-R Datasheet(HTML) 10 Page - List of Unclassifed Manufacturers

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NX26F011A
NX26F041A
10
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Conditions
Range
Unit
Vcc
Supply Voltage
0 to 7.0
V
VIN, VOUT
Voltage Applied to Any Pin
Relative to Ground
–0.5 to Vcc + 0.6
V
TSTG
Storage Temperature
–65 to +150
°C
TLEAD
Lead Temperature
Soldering, Ten Seconds
+300
°C
Note:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure beyond absolute maximum ratings (listed above) may cause permanent damage
OPERATING RANGES
Symbol
Parameter
Conditions
Min
Max
Unit
Vcc
Supply Voltage
5.0V
4.5
5.5
V
3.0V
2.7
3.6
V
3.0V
TA
Ambient Temperature, Operating
Commercial
0
+70
°C
Extended(1)
–15
+80
°C
Industrial(1)
–40
+85
°C
Note:
1. Contact
NexFlash for availability of extended or industrial grade devices.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input Low Voltage
–0.4
—
Vcc x 0.2
V
VIH
Input High Voltage
Vcc x 0.6
—
Vcc + 0.5
V
VOL
Output Low Voltage
IOL = 2 mA, V CC = 4.5V
——
0.45
V
VOH
Output High Voltage
IOH = –400
µA, VCC = 4.5V
2.4
——
V
VOLC
Output Low Voltage CMOS(1)
VCC = Min, IOL = 10
µA
——
0.15
V
VOHC
Output High Voltage CMOS(1)
VCC = Min, IOH = –10
µAVCC – 0.3
——
V
I LI
Input Leakage
0 < V IN < Vcc
–10
—
+10
µA
IOL
I/O Leakage
0 < VIN < Vcc, Output Disabled
–10
—
+10
µA
ICC (active)
Active Power Supply Current(2)
fCLK
≤ 8 MHz (1/tCP)
VCC = 4.5V to 5.5V
—
15
30
mA
VCC = 2.7V to 3.3V
—
510
ICCSB (standby) Standby Power Supply Current
SIO = 0V or VCC,
—
<1
10
µA
SCK = 0V
CIN
Input Capacitance(1)
TA = 25°C, VCC = 5V or 3V
——
10
pF
Frequency = 1 MHz
COUT
Output Capacitance(1)
TA = 25°C, VCC = 5V or 3V
——
10
pF
Frequency = 1 MHz
Notes:
1. Tested on a sample basis or specified via design or characterization data.
2. The device leaves “standby” power consumption after the clock transitions from low-to-high. Full “active” power consumption
starts after the correct device address has been decoded during a sector read or write sequence.



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