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NexFlash Technologies, Inc.
11
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
AC ELECTRICAL CHARACTERISTICS
5V (16 MHz)
3V (8 MHz)
Symbol
Description
Min
Typ
Max
Min
Typ Max
Unit
tCP
SCK Serial Clock Period
62
——
125
——
ns
tCL, tCH
SCK Serial Clock High or Low Time
26
——
57
——
ns
tCR
SCK Serial Clock Rise Time(1)
——
7
——
5ns
tCF
SCK Serial Clock Fall Time(1)
——
7
——
5ns
tDS
SIO Setup Time to SCK Rising Edge
40
——
100
——
ns
tDH
SIO Hold Time From SCK Rising Edge
0
——
0
——
ns
tDV
SIO Valid after SCK(2)
——
60
——
115
ns
tRESET
SCK Low Duration for
1.5
—
53
—
10
µs
Valid Reset or Standby
(See Figures 9 & 10)
tRP
Read Pre-data Delay
(See Figure 9)
30
——
100
——
µs
tWP
Erase/Write Program Time(3)
(See Figure 10)
—
35
—
510
ms
Notes:
1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.
2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.
3. The NX26F011A and NX26F041A are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K
cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.
SCK
SIO
Read
Write
tCP
tCH
tCL
tDS
tDH
tCF
tCR
tDV
tDV
CLOCK AND DATA TIMING
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