STE45NK80ZD

2/10

Table 3: Absolute Maximum ratings

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Table 6: Gate-Source Zener Diode

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

800

V

800

V

Gate- source Voltage

± 30

V

45

28

A

A

Drain Current (pulsed)

180

A

600

W

Derating Factor

5W/°C

Gate source ESD(HBM-C=100pF, R=1.5k

Ω)

7KV

dv/dt (1)

Peak Diode Recovery voltage slope

8

V/ns

Insulation Withstand Voltage (AC-RMS) from All Four

Terminals to External Heatsink

2500

V

Tstg

Operating Junction Temperature

Storage Temperature

- 65 to 150

°C

Rthj-case

Thermal Resistance Junction-case Max

0.2

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

40

°C/W

Symbol

Parameter

Max. Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

45

A

Single Pulse Avalanche Energy

1.2

J

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V