WNB325C5APPS12 datasheet(3/7 Pages) WEEN

3 / 7 page

WeEn Semiconductors

WNB325C5APPS12

Hyperfast power diode - Bare die

WNB325C5APPS12

Product data sheet

All information provided in this document is subject to legal disclaimers.

14 December 2018

3 / 7

6. Characteristics

Table 7. Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF*

forward voltage

IF = 100 A; Tj = 25 °C

2.8

3.3

VF**

forward voltage

IF = 100 A; Tj = 150 °C

2.2

IR*

reverse current

VR = 1200 V; Tj = 25 °C

250

μA

IR**

reverse current

VR = 1200 V; Tj = 150 °C

2000

μA

Dynamic characteristics

trr**

reverse recovery time

IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;

Tj = 25 °C

IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 25 °C

115

IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 125 °C

244

IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 150 °C

276

Notes:

(1) * mean that parameter are 100% test at Tamb = 25°C

(2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly

assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this

data sheet, similar to the assembled devices BYC100W-1200P.

WNB325C5APPS12 Datasheet(PDF) 3 Page - WeEn Semiconductors

WNB325C5APPS12 Datasheet(HTML) 3 Page - WeEn Semiconductors

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL