WNSC021200 datasheet(3/11 Pages) WEEN

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WeEn Semiconductors

WNSC021200

Silicon Carbide Diode

WNSC021200

Product data sheet

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2 July 2019

3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

VRRM

repetitive peak reverse

voltage

1200

VRWM

crest working reverse

voltage

1200

reverse voltage

1200

IF(AV)

average forward current

δ = 0.5 ; square-wave pulse; Tmb ≤ 160 °C;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

IFRM

repetitive peak forward

current

δ = 0.5 ; tp = 25 μs; Tmb ≤ 160 °C;

square-wave pulse

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse

tp = 10 μs; Tj(init) = 25 °C; sine-wave pulse

250

I2t

I2t for fusing

sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms

A2s

Tstg

storage temperature

-55 to 175

°C

junction temperature

175

°C

0123

IF(AV) (A)

Ptot

(W)

0.1

175

160

165

170

Tmb(max)

(°C)

155

δ = 1

0.5

0.2

Vo = 0.706V

Rs = 0.5693

acf15-001

-50

050

100

150

200

Tmb (°C)

IF(AV)

(A)

acf15-002

160 °C

IF(AV) = IF(RMS) × √δ

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

typical values

Fig. 2. Forward current as a function of mounting base

temperature; typical values

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