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STY60NK30Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY60NK30Z
Description  N-CHANNEL 300V - 0.033ohm - 60A Max247 Zener-Protected SuperMESH Power MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY60NK30Z Datasheet(HTML) 3 Page - STMicroelectronics

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STY60NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA,VGS = 0
300
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating,TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 30 A
0.033
0.045
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V, ID =30A
29
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
7200
1070
250
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 240V
880
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =150 V, ID =30 A
RG =4.7Ω , VGS =10V
(Resistive Load see, Figure 3)
50
90
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =240 V, ID =60 A,
VGS =10 V
220
46
123
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD =150 V, ID =30A
RG =4.7Ω ,VGS =10 V
(Resistive Load see, Figure 3)
150
60
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =240 V, ID =60A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
40
65
110
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
VSD (1)
ForwardOnVoltage
ISD =60A,VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =60A,di/dt =100 A/µs
VR = 100 V, Tj =150°C
(see test circuit, Figure 5)
475
6.4
27
ns
µC
A



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